Efnisyfirlit

• Title Page
• Copyright
• Contents
• Preface
• What’s New in the Third Edition
• Topical Coverage
• Key Features
• Textbook Supplements
• Acknowledgments
• Chapter 0: Introduction
• 0.1: Semiconductor Devices
• 0.1.1: Device Building Blocks
• 0.1.2: Major Semiconductor Devices
• 0.2: Semiconductor Technology
• 0.2.1: Key Semiconductor Technologies
• 0.2.2: Technology Trends
• Summary
• Part I: Semiconductor Physics
• Chapter 1: Energy Bands and Carrier Concentration in Thermal Equilibrium
• 1.1: Semiconductor Materials
• 1.1.1: Element Semiconductors
• 1.1.2: Compound Semiconductors
• 1.2: Basic Crystal Structures
• 1.2.1: Unit Cell
• 1.2.2: The Diamond Structure
• 1.2.3: Crystal Planes and Miller Indices
• 1.3: Valence Bonds
• 1.4: Energy Bands
• 1.4.1: Energy Levels of Isolated Atoms
• 1.4.2: The Energy-Momentum Diagram
• 1.4.3: Conduction in Metals, Semiconductors, and Insulators
• 1.5: Intrinsic Carrier Concentration
• 1.6: Donors and Acceptors
• 1.6.1: Nondegenerate Semiconductor
• 1.6.2: Degenerate Semiconductor
• Summary
• Chapter 2: Carrier Transport Phenomena
• 2.1: Carrier Drift
• 2.1.1: Mobility
• 2.1.2: Resistivity
• 2.1.3: The Hall Effect
• 2.2: Carrier Diffusion
• 2.2.1: Diffusion Process
• 2.2.2: Einstein Relation
• 2.2.3: Current Density Equations
• 2.3: Generation and Recombination Processes
• 2.3.1: Direct Recombination
• 2.3.2: Quasi-Fermi Level
• 2.3.3: Indirect Recombination
• 2.3.4: Surface Recombination
• 2.4: Continuity Equation
• 2.4.1: Steady-State Injection from One Side
• 2.4.2: Minority Carriers at the Surface
• 2.4.3: The Haynes-Shockley Experiment
• 2.5: Thermionic Emission Process
• 2.6: Tunneling Process
• 2.7: Space-Charge Effect
• 2.8: High-Field Effects
• Summary
• Part II: Semiconductor Devices
• Chapter 3: p-n Junction
• 3.1: Thermal Equilibrium Condition
• 3.1.1: Band Diagram
• 3.1.2: Equilibrium Fermi Levels
• 3.1.3: Space Charge
• 3.2: Depletion Region
• 3.2.1: Abrupt Junction
• 3.2.2: Linearly Graded Junction
• 3.3: Depletion Capacitance
• 3.3.1: Capacitance-Voltage Characteristics
• 3.3.2: Evaluation of Impurity Distribution
• 3.3.3: Varactor
• 3.4: Current-Voltage Characteristics
• 3.4.1: Ideal Characteristics
• 3.4.2: Generation-Recombination and High-Injection Effects
• 3.4.3: Temperature Effect
• 3.5: Charge Storage and Transient Behavior
• 3.5.1: Minority-Carrier Storage
• 3.5.2: Diffusion Capacitance
• 3.5.3: Transient Behavior
• 3.6: Junction Breakdown
• 3.6.1: Tunneling Effect
• 3.6.2: Avalanche Multiplication
• 3.7: Heterojunction
• Summary
• Chapter 4: Bipolar Transistors and Related Devices
• 4.1: Transistor Action
• 4.1.1: Operation in the Active Mode
• 4.1.2: Current Gain
• 4.2: Static Characteristics of Bipolar Transistors
• 4.2.1: Carrier Distribution in Each Region
• 4.2.2: Ideal Transistor Currents for Active Mode Operation
• 4.2.3: Modes of Operation
• 4.2.4: Current-Voltage Characteristics of Common-Base and Common-Emitter Configurations
• 4.3: Frequency Response and Switching of Bipolar Transistors
• 4.3.1: Frequency Response
• 4.3.2: Switching Transients
• 4.4: Nonideal Effects
• 4.4.1: Emitter Bandgap Narrowing
• 4.4.2: Graded-Base Region
• 4.4.3: Current Crowding
• 4.4.4: Generation-Recombination Current and High-Current Effect
• 4.5: Heterojunction Bipolar Transistors
• 4.5.1: Current Gain in HBT
• 4.5.2: Basic HBT Structures
• 4.5.3: Advanced HBTs
• 4.6: Thyristors and Related Power Devices
• 4.6.1: Basic Characteristics
• 4.6.2: Bidirectional Thyristor
• Summary
• Chapter 5: MOS Capacitor and MOSFET
• 5.1: Ideal MOS Capacitor
• 5.2: SiO2-Si MOS Capacitor
• 5.3: Carrier Transport in MOS Capacitors
• 5.3.1: Basic Conduction Processes in Insulators
• 5.3.2: Dielectric Breakdown
• 5.4: Charge-Coupled Devices (CCD)
• 5.5: MOSFET Fundamentals
• 5.5.1: Basic Characteristics
• 5.5.2: Types of MOSFET
• 5.5.3: Threshold Voltage Control
• Summary
• Chapter 6: Advanced MOSFET and Related Devices
• 6.1: MOSFET Scaling
• 6.1.1: Short-Channel Effects
• 6.1.2: Scaling Rules
• 6.1.3: MOSFET Structures to Control Short-Channel Effects
• 6.2: CMOS and BiCMOS
• 6.2.1: The CMOS Inverter
• 6.2.2: Latch-up
• 6.2.3: CMOS Image Sensor
• 6.2.4: BiCMOS
• 6.3: MOSFET on Insulator
• 6.3.1: Thin Film Transistor (TFT)
• 6.3.2: Silicon-on-Insulator (SOI) Devices
• 6.3.3: Three-Dimensional Structures
• 6.4: MOS Memory Structures
• 6.4.1: DRAM
• 6.4.2: SRAM
• 6.4.3: Nonvolatile Memory
• 6.5: Power MOSFET
• Summary
• Chapter 7: MESFET and Related Devices
• 7.1: Metal-Semiconductor Contacts
• 7.1.1: Basic Characteristics
• 7.1.2: The Schottky Barrier
• 7.1.3: The Ohmic Contact
• 7.2: MESFET
• 7.2.1: Basic Device Structures
• 7.2.2: Principles of Operation
• 7.2.3: Current-Voltage Characteristics
• 7.2.4: High-Frequency Performance
• 7.3: MODFET
• 7.3.1: MODFET Fundamentals
• 7.3.2: Current-Voltage Characteristics
• 7.3.3: Cutoff Frequency
• Summary
• Chapter 8: Microwave Diodes; Quantum-Effect and Hot-Electron Devices
• 8.1: Microwave Frequency Bands
• 8.2: Tunnel Diode
• 8.3: IMPATT Diode
• 8.3.1: Static Characteristics
• 8.3.2: Dynamic Characteristics
• 8.4: Transferred-Electron Devices
• 8.4.1: Negative Differential Resistance
• 8.4.2: Device Performances
• 8.5: Quantum-Effect Devices
• 8.5.1: Resonant Tunneling Diode
• 8.5.2: Unipolar Resonant Tunneling Transistor
• 8.6: Hot-Electron Devices
• 8.6.1: Hot-Electron HBT
• 8.6.2: Real-Space–Transfer Transistor
• Summary
• Chapter 9: Light Emitting Diodes and Lasers
• 9.1: Radiative Transitions and Optical Absorption
• 9.1.1: Radiative Transitions
• 9.1.2: Optical Absorption
• 9.2: Light-Emitting Diodes
• 9.2.1: Structure of LED
• 9.2.2: Optical characteristics of the LED
• 9.2.3: Quantum Efficiency
• 9.3: Various Light-Emitting Diodes
• 9.3.1: Visible LEDs
• 9.3.2: Organic LED
• 9.3.3: White-Light LED
• 9.3.4: Infrared LED
• 9.4: Semiconductor Lasers
• 9.4.1: Semiconductor Materials
• 9.4.2: Laser Operation
• 9.4.3: Basic Laser Structure
• 9.4.4: Distributed Feedback Lasers
• 9.4.5: Quantum-Well Lasers
• 9.4.6: Separate-Confinement Heterostructure MQW laser
• 9.4.7: Quantum-Wire and Quantum-Dot lasers
• 9.4.8: Vertical-Cavity Surface-Emitting Laser (VCSEL)
• 9.4.9: Quantum-Cascade Laser
• Summary
• Chapter 10: Photodetectors and Solar Cells
• 10.1: Photodetectors
• 10.1.1: Photoconductor
• 10.1.2: Photodiode
• 10.1.3: p-i-n Photodiode
• 10.1.4: Metal-Semiconductor Photodiode
• 10.1.5: Avalanche Photodiode
• 10.1.6: Phototransistor
• 10.1.7: Heterojunction Photodiode
• 10.1.8: Superlattice APD
• 10.1.9: Quantum-Well Infrared Photodetector
• 10.2: Solar Cells
• 10.2.1: Solar Radiation
• 10.2.2: p-n Junction Solar Cell
• 10.2.3: Conversion Efficiency
• 10.3: Silicon and Compound-Semiconductor Solar Cells
• 10.3.1: Wafer-Based Solar Cells
• 10.3.2: Thin-Film Solar Cells
• 10.4: Third-Generation Solar Cells
• 10.5: Optical Concentration
• Summary
• Part III: Semiconductor Technology
• Chapter 11: Crystal Growth and Epitaxy
• 11.1: Silicon Crystal Growth from the Melt
• 11.1.1: Starting Material
• 11.1.2: The Czochralski Technique
• 11.1.3: Distribution of Dopant
• 11.1.4: Effective Segregation Coefficient
• 11.2: Silicon Float-Zone Proces
• 11.3: GaAs Crystal-Growth Techniques
• 11.3.1: Starting Materials
• 11.3.2: Crystal-Growth Techniques
• 11.4: Material Characterization
• 11.4.1: Wafer Shaping
• 11.4.2: Crystal Characterization
• 11.5: Epitaxial-Growth Techniques
• 11.5.1: Chemical-Vapor Deposition
• 11.5.2: Molecular-Beam Epitaxy
• 11.6: Structures and Defects in Epitaxial Layers
• 11.6.1: Lattice-Matched and Strained-Layer Epitaxy
• 11.6.2: Compound Semiconductors on Silicon
• Summary
• Chapter 12: Film Formation
• 12.1: Thermal Oxidation
• 12.1.1: Kinetics of Growth
• 12.1.2: Thin Oxide Growth
• 12.2: Chemical Vapor Deposition of Dielectrics
• 12.2.1: Chemical Vapor Deposition
• 12.2.2: Silicon Dioxide
• 12.2.3: Silicon Nitride
• 12.2.4: Low-Dielectric-Constant Materials
• 12.2.5: High-Dielectric–Constant Materials
• 12.3: Chemical Vapor Deposition of Polysilicon
• 12.4: Atom Layer Deposition
• 12.5: Metallization
• 12.5.1: Physical-Vapor Deposition
• 12.5.2: CVD Metal Deposition
• 12.5.3: Aluminum Metallization
• 12.5.4: Copper Metallization
• 12.5.5: Chemical-Mechanical Polishing
• 12.5.6: Silicide
• Summary
• Chapter 13: Lithography and Etching
• 13.1: Optical Lithography
• 13.1.1: The Clean Room
• 13.1.2: Exposure Equipment
• 13.1.3: Masks
• 13.1.4: Photoresist
• 13.1.5: Pattern Transfer
• 13.1.6: Resolution Enhancement Techniques
• 13.2: Next-Generation Lithographic Methods
• 13.2.1: Electron-Beam Lithography
• 13.2.2: Extreme-Ultraviolet Lithography
• 13.2.3: Ion-Beam Lithography
• 13.2.4: Comparison of Various Lithographic Methods
• 13.3: Wet Chemical Etching
• 13.3.1: Silicon Etching
• 13.3.2: Silicon Dioxide Etching
• 13.3.3: Silicon Nitride and Polysilicon Etching
• 13.3.4: Aluminum Etching
• 13.3.5: Gallium Arsenide Etching
• 13.4: Dry Etching
• 13.4.1: Plasma Fundamentals
• 13.4.2: Surface Chemistry
• 13.4.3: Capacitively Coupled Plasmas Etchers
• 13.4.4: Inductively Coupled Plasma Etchers
• 13.4.5: Plasma Diagnostics and End-Point Control
• 13.4.6: Etching Chemistries and Applications
• Summary
• Chapter 14: Impurity Doping
• 14.1: Basic Diffusion Process
• 14.1.1: Diffusion Equation
• 14.1.2: Diffusion Profiles
• 14.1.3: Evaluation of Diffused Layers
• 14.2: Extrinsic Diffusion
• 14.2.1: Concentration-Dependent Diffusivity
• 14.2.2: Diffusion Profiles
• 14.3: Diffusion-Related Processes
• 14.3.1: Lateral Diffusion
• 14.3.2: Impurity Redistribution During Oxidation
• 14.4: Range of Implanted Ions
• 14.4.1: Ion Distribution
• 14.4.2: Ion Stopping
• 14.4.3: Ion Channeling
• 14.5: Implant Damage and Annealing
• 14.5.1: Implant Damage
• 14.5.2: Annealing
• 14.6: Implantation-Related Processes
• 14.6.1: Multiple Implantation and Masking
• 14.6.2: Tilt-Angle Ion Implantation
• 14.6.3: High-Energy and High-current Implantation
• Summary
• Chapter 15: Integrated Devices
• 15.1: Passive Components
• 15.1.1: The Integrated-Circuit Resistor
• 15.1.2: The Integrated-Circuit Capacitor
• 15.1.3: The Integrated-Circuit Inductor
• 15.2: Bipolar Technology
• 15.2.1: The Basic Fabrication Process
• 15.2.2: Dielectric Isolation
• 15.2.3: Self-Aligned Double-Polysilicon Bipolar Structure
• 15.3: MOSFET Technology
• 15.3.1: The Basic Fabrication Process
• 15.3.2: CMOS Technology
• 15.3.3: BiCMOS Technology
• 15.3.4: FinFET Technology
• 15.3.5: Memory Devices
• 15.4: MESFET Technology
• 15.5: Challenges for Nanoelectronics
• 15.5.1: Challenges for Integration
• 15.5.2: System-on-a-Chip
• Summary
• Appendix A: List of Symbols
• Appendix B: International Systems of Units (SI Units)
• Appendix C: Unit Prefixes
• Appendix D: Greek Alphabet
• Appendix E: Physical Constants
• Appendix F: Properties of Important Element and Binary Compound Semiconductors at 300 K
• Appendix G: Properties of Si and GaAs at 300 K
• Appendix H: Derivation of the Density of States in a Semiconductor
• Appendix I: Derivation of Recombination Rate for Indirect Recombination
• Appendix J: Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode
• Appendix K: Basic Kinetic Theory of Gases
• Appendix L: Answers to Selected Problems
• Photo credits
• Index
• EULA